Enhancement of Endurance for CuzO based RRAM cell

摘要：

For the first time,we report that the copper oxide (CuxO) based Resistive Random Access Memory (RRAM) cell can achieve 104 cycles (i.e. ～10x better) as a new record as well as elimination of the initial forming than reported in literature. The Copper oxide is integrated in MIM (metal-insulator-metal) structure and is grown by plasma oxidation of Cu substrate,with CuO near upper surface and graded CuxO (i.e. increasingly Cu rich or O-vacancies rich) toward the Cu substrate. A thinner CuO upper layer can eliminate forming process and,for in turn,greatly enhance the endurance of resistive switching by eliminating the damage during the forming process..

作者: M.Yin P.Zhou H.B.Lv T.A.Tang B.A.Chen Y.Y.Lin A.Bao M.H.Chi

作者单位: School of Microelectronics and State Key Lab of ASIC & System,Fudan University,Shanghai 200433,China Memory Technology Development Center,Semiconductor Manufacturing International Corp.,Shanghai,201203

会议类型: 国际会议

会议名称: 9th International Conference on Solid-State and Integrated-Circuit Technology(第9届固态和集成电路国际会议)

会议地点: 北京

会议语种:英文

页码: 917-920

在线出版日期: 2008-10-20（万方平台首次上网日期，不代表论文的发表时间）