Resistive Switching Behaviors and Mechanism of Transition Metal Ozides-Based Memory Devices

摘要：

In this paper,the characteristics and mechanism of the transition metal oxide (TMO) based resistive switching memory (RRAM) devices were addressed. The results show that doping in oxide matrix materials,electrode material,and operating mode of the set/reset process may significantly affect the resistive switching behaviors of RRAM devices. Optimizing the dopants and matrix materials,electrode materials,device structure,and operating modes and understanding the related mechanisms are required to achieve the excellent device performance of TMO-based RRAM for the memory applicatioa A unified physical model,based on the electron hopping transport between oxygen vacancies along the conductive filament paths,is used to explain and describe the resistive switching behaviors of the TMO based RRAM devices.

作者: J.F.Kang Y.Y.Wang B.Sun B.Gao N.Xu X.Sun L.F.Liu Y.Wang X.Y.Liu R.Q.Han

作者单位: Institute of Microelectronics,Peking University & Key Laboratory of Microelectronic Devices and Circuits,Ministry of Education,Beijing 100871,P.R.China

会议类型: 国际会议

会议名称: 9th International Conference on Solid-State and Integrated-Circuit Technology(第9届固态和集成电路国际会议)

会议地点: 北京

会议语种:英文

页码: 921-924

在线出版日期: 2008-10-20（万方平台首次上网日期，不代表论文的发表时间）