Bipolar Resistive Switching Behaviors of Ag/Si3N4/Pt Memory Device

摘要：

The resistive switching behavior of Ag/Si3N4/Pt device was observed and studied for the first time. Resistance ratio larger than 4*102 and 104s retention time were achieved which indicating its potential for resistive switching memory application. A physical model is proposed to explain the resistive switching behaviors of Ag/Si3N4/Pt devices.

作者: B.Sun L.F.Liu Y.Wang D.D.Han X.Y.Liu R.Q.Han J.F.Kang

作者单位: Key Laboratory of Microelectronic Devices and Circuits,Institute of Microelectronics,Peking University,Beijing 100871,P.R.China

会议类型: 国际会议

会议名称: 9th International Conference on Solid-State and Integrated-Circuit Technology(第9届固态和集成电路国际会议)

会议地点: 北京

会议语种:英文

页码: 925-927

在线出版日期: 2008-10-20（万方平台首次上网日期，不代表论文的发表时间）