Comparison of PN Diodes and FETs as Phase Change Memory (PCM) Driving Devices

摘要：

In this study,the current driving capability of PN diodes and Field Effect Transistors (FETs) for Phase Change Memory (PCM) applications is investigated. To have a fair comparison,vertical gate-all-around (GAA) MOSFETs with similar cross-section as the PN diodes are selected for comparison. Through extensive 3-D device simulations have been performed based on existing experimental data from the 90nm to 22nm technology node,PN diodes are found to be a better choice for delivering higher programming currents down to 22nm technology node due to the higher effective cross-sectional area of current flow. In addition,the GAA MOSFETs are subject to serious cross-talk issues that may limit their performance in PCM applications.

作者: Lin Li Kailiang Lu K.C.Kwong Jin He Mansun Chan

作者单位: Department of ECE,Hong Kong University of Science and Technology,Clear Water Bay,Kowloon,Hong Kong Department of ECE,Hong Kong University of Science and Technology,Clear Water Bay,Kowloon,Hong Kong S

会议类型: 国际会议

会议名称: 9th International Conference on Solid-State and Integrated-Circuit Technology(第9届固态和集成电路国际会议)

会议地点: 北京

会议语种:英文

页码: 928-931

在线出版日期: 2008-10-20（万方平台首次上网日期，不代表论文的发表时间）