The Parasitic Effects Induced by the Contact in RRAM with MIM Structure
This paper has reported a programmable switch composed of copper-doped-SiO2 sandwiched between Cu top electrode and inert W bottom electrode. Reproducible rectifying-like I-V performance was found in the device with top electrode (TE),while with regard to the cell without TE,no rectifying-like I-V characterization was observed. This rectifying-like I-V curve is properly caused by electrode contact. To further prove the effect of TE,Ron retention behavior of the device with TE and without TE were investigated. The testing results clearly showed that the Ron retention property of device with TE was worse than that without TE. We propose a model for the interface between top electrode and copper-doped-SiO2 to interpret this rectifying-like performance,which indicates that interface rectifying-like effect emerges when on-resistance is comparable with the resistance of diode-like junction between metal contact and resistive-material. The results suggest that optimizing interface condition or adjusting resistive material with large on-resistance is essential for robust MIM RRAM design.
Lijie Zhang Ru Huang Albert Z.H.Wang Dake Wu Runsheng Wang Yongbian Kuang
Key Laboratory of Microelectronic Devices and Circuits,Institute of Microelectronics,Peking Universi Dept.of Electrical Engineering,University of California,Riverside,CA 92521,USA
国际会议
9th International Conference on Solid-State and Integrated-Circuit Technology(第9届固态和集成电路国际会议)
北京
英文
932-935
2008-10-20（万方平台首次上网日期，不代表论文的发表时间）