High-performance hetero-nanocrystal memories

摘要：

Metal-oxide-semiconductor field effect transistor (MOSFET) memories with self-aligned hetero-nanocrystals (TiSi2/Si and Ge/Si) as the floating gates were fabricated and characterized. Better performances were found in hetero-nanocrystal memory,including longer retention time,larger storage capability and improved writing efficiency.

作者: Bei Li Yan Zhu Huimei Zhou Jianlin Liu

作者单位: Department of Electrical Engineering,University of California at Riverside,CA 92521,USA

会议类型: 国际会议

会议名称: 9th International Conference on Solid-State and Integrated-Circuit Technology(第9届固态和集成电路国际会议)

会议地点: 北京

会议语种:英文

页码: 947-950

在线出版日期: 2008-10-20（万方平台首次上网日期，不代表论文的发表时间）