Physical and electrical characteristics of atomic layer deposited RuO2 nanocrystals for nanoscale nonvolatile memory applications
The physical and electrical characteristics of atomic layer deposited RuO2 nanocrystals embedded in high-K HfO2/Al2O3 films in an n-Si/SiO2/HfO2/RuO2/Al2O3/Pt memory structure have been investigated. A small size of <10 nm and high-density of-1.6×1012/cm2 for the RuO2 nanocrystals have been observed by high-resolution transmission electron microscope (HRTEM). The RuO2 metal nanocrystals and all high-k films have been confirmed by x-ray photoelectron spectroscopy (XPS). A large hysteresis memory window of ΔV=10.8 V at a gate voltage of Vg=±10 V has been observed for RuO2 nanocrystal memory capacitors. A hysteresis memory window of ΔV=2.4 V has also been observed under a small sweeping gate voltage of Vg=±5 V,due to charge storage in the RuO2 metal nanocrystals. The RuO2 metal nanocrystal memory capacitors have a large breakdown voltage of -15 V. A low charge loss of 15% is observed after 10 years of retention.
W.Banerjee S.Maikap
Nano Laboratory,Department of Electronic Engineering,Chang Gung University 259 Wen-Hwa 1st Rd.,Kwei-Shan,Tao-Yuan 333,Taiwan,R.O.C.
国际会议
9th International Conference on Solid-State and Integrated-Circuit Technology(第9届固态和集成电路国际会议)
北京
英文
951-954
2008-10-20（万方平台首次上网日期，不代表论文的发表时间）