Gradual Ge(1-z)Siz/Si heteronanocrystals based non-volatile floating gate memory device with asymmetric tunnel barriers

摘要：

The gradual Ge(1-x)Six/Si heteronanocrystals on ultra thin SiO2 were fabricated to form the metal-oxide -semiconductor (MOS) memory structure with asymmetric tunnel barriers through combining self-assembled growth and selective chemical etching technique. Charge storage characteristics in such memory structure have been investigated by using capacitance-voltage measurements. The observations demonstrate that the holes reach a longer retention time even with an ultra thin tunnel oxide,owing to the high band offset at the valence band between Ge and Si.

作者: Jin Lu Guangli Wang Yubin Chen Zheng Zuo Yi Shi Lin Pu Youdou Zheng

作者单位: Department of Physics and Key Laboratory of Photonic and Electronic Materials,Nanjing University,Nanjing 210093,China

会议类型: 国际会议

会议名称: 9th International Conference on Solid-State and Integrated-Circuit Technology(第9届固态和集成电路国际会议)

会议地点: 北京

会议语种:英文

页码: 955-957

在线出版日期: 2008-10-20（万方平台首次上网日期，不代表论文的发表时间）