Electrical Properties of Multilayer Silicon Nano-crystal Nonvolatile Memory
Nonvolatile memories with triple layers silicon nanocrystals have been fabricated with conventional CMOS technology. In this paper,the program and erase performance and reliability of nanocrystal nonvolatile memories (NCNVMs) with triple layers of nanocrystals are investigated. Experiment result indicates that the nanocrystals in the triple layers NCNVMs are difficult to be fully charged during program process for the second and third layers nanocrystals at low applied gate voltage. The program and erase transient characteristics for the triple NCNVMs is also measured at various programming times. The charges mainly trapped at the first layer nanocrystal below 1 ms,and then transferred to the second and third layer silicon nanocrystal as increasing program time further more. The reliability performance is analyzed by endurance measurement The memory window has little degradation after 104 cycling.
Zhigang Zhang Liudi Wang Ping Mao Liyang Pan Jun Xu
Institute of Microelectronics,Tsinghua University,Tsinghua National Lab for Information Science and Technology Beijing 100084,PR.China
国际会议
9th International Conference on Solid-State and Integrated-Circuit Technology(第9届固态和集成电路国际会议)
北京
英文
962-965
2008-10-20（万方平台首次上网日期，不代表论文的发表时间）