Enhancing Silicon Photovoltaics Research via Integrated Circuit Wafer Engineering Defect Science Ezperiences and Industry/University Consortia

摘要：

Experimental electrical property data on silicon grain boundaries (GBs) are reported on a unique sample set consisting of direct silicon bonded (110)/(100) hybrid orientation wafers using C-V,I-V, and MOS capacitance transient techniques. For the relatively clean interfacial bonded GB,the density of GB states NT is on the order of 1012 eV(-1)cm(-2), and the charge neutral level is at ～0.53 eV from the valance band. NT increased to over 2×1013 eV(-1)cm(-2) after Fe contamination,but was reduced to -1×1013eV(-1)cm(-2) after a hydrogenation treatment. The charge neutral level shifted towards the conduction b and after Fe contamination; however,this could be reversed by hydrogenation. The electron emission rate from the GB donor states was about two orders of magnitude larger than their corresponding hole emission rate.

作者: G.A.Rozgonyi J.Lu M Wagener X.Yu Y.Park L.Yu

作者单位: Materials Science and Engineering Dept.,North Carolina State University,Raleigh,NC 27695 Nelson Mandela Metropolitan University,Port Elizabeth,South Africa

会议类型: 国际会议

会议名称: 9th International Conference on Solid-State and Integrated-Circuit Technology(第9届固态和集成电路国际会议)

会议地点: 北京

会议语种:英文

页码: 966-969

在线出版日期: 2008-10-20（万方平台首次上网日期，不代表论文的发表时间）