Metal Induced Continuous Grain Polycrystalline Silicon Thin Film Transistors

摘要：

Metal induced polycrystalline silicon (poly-Si) films composing of continuous zonal domain (CZD) have been obtained through pre-defined crystalline nucleation lines. The impact of glass substrate shrinking on subsequent alignment process is determined. The crystallization process is precisely controllable and the annealing time can be shorter than one hour. P-channel thin film transistors (TFTs) built on CZD poly-Si have high performance and high uniformity. In this paper,we also demonstrate the application of CZD TFT to fast addressing active matrix field sequential color (FSC) LCD. A prototype display panel has been fabricated. This panel also has a large aperture ratio. Excellent color purity and fast moving image can be obtained.

作者: Hoi Sing Kwok Man Wong Shuyun Zhao Zhiguo Meng

作者单位: Department of Electronic and Computer Engineering,Hong Kong University of Science and Technology Clear Water Bay,Hong Kong

会议类型: 国际会议

会议名称: 9th International Conference on Solid-State and Integrated-Circuit Technology(第9届固态和集成电路国际会议)

会议地点: 北京

会议语种:英文

页码: 970-973

在线出版日期: 2008-10-20（万方平台首次上网日期，不代表论文的发表时间）