Optimization of Charge Pumping Technique in Polysilicon TFTs for Geometric Effect Elimination and Trap State Density Eztraction

摘要：

Charge pumping (CP) technique is optimized to minimize the geometric component in the CP current in polysilicon TFTs,by taking into account the pulse waveform and its transition times. Based on the optimization,ideal CP curves similar to those in MOSFETs are obtained. Important information on the trap state density of polysilicon TFTs,i.e.,the mean value as well as the energy distribution within the band-gap,can be reliably extracted in different ways.

作者: Lei Lu Mingxiang Wang Man Wong

作者单位: Dept.of Microelectronics,Soochow University,Suzhou 215021,P.R.China Dept.of Electronic and Computer Engineering,the Hong Kong University of Science and Technology,Hong

会议类型: 国际会议

会议名称: 9th International Conference on Solid-State and Integrated-Circuit Technology(第9届固态和集成电路国际会议)

会议地点: 北京

会议语种:英文

页码: 978-981

在线出版日期: 2008-10-20（万方平台首次上网日期，不代表论文的发表时间）