Fabrication and Characteristics of ZnO-based Thin Film Transistors

摘要：

ZnO-based thin-film transistors (TFT) have been fabricated on p-Si (100) substrates by radio frequency (rf) magnetron sputtering at room temperature with a bottom gate configuration. The XRD and SEM show that ZnO films had high crystalline quality. The ZnO films present an average optical transmission (including the glass substrate) of 80 % in the visible part of the spectrum. The electrical properties of ZnO-based TFTs were investigated by Id-Vd and Id-VG measurements. The ZnO TFT operates in the enhancement mode with a channel mobility of 6. 86 cm2/V · s. The combination of transparency,high channel mobility and room temperature processing makes the ZnO-TFT a very promising low cost optoelectronic device for the next generation of flat panel display (FDP).

作者: Dedong Han Yi Wang Shengdong Zhang Lei Sun Jinfeng Kang Xiaoyan Liu Gang Du Lifeng Liu Ruqi Han

作者单位: Key Laboratory of Microelectronic Devices and Circuits,Institute of Microelectronics,Peking University,Beijing 100871,P.R.China

会议类型: 国际会议

会议名称: 9th International Conference on Solid-State and Integrated-Circuit Technology(第9届固态和集成电路国际会议)

会议地点: 北京

会议语种:英文

页码: 982-984

在线出版日期: 2008-10-20（万方平台首次上网日期，不代表论文的发表时间）