Monolithic Integration of Light Emitting Diodes,Photodetector and Receiver Circuit in Standard CMOS Technology

摘要：

A monolithic silicon CMOS optoelectronic integrated circuit (OEIC) is designed and fabricated with standard 0.35um CMOS technology. This OEIC circuit consists of light emitting diodes (LED),silicon dioxide waveguide,photodiodes and receiver circuit. The silicon LED operates in reverse breakdown mode and can be turned on at 8.5V 10mA. The silicon dioxide waveguide is composed of multiple layers of silicon dioxide between different metals layers. A two PN-junctions photodetector composed of n-well/p-substrate junction and p+active implantation/n-well junction maximizes the depletion region width. The readout circuitry in pixels is exploited to handle as small as O.1nA photocurrent. Simulation and testing results show that the optical emissions powers are about two orders higher than the low frequency detectivity of silicon CMOS photodetector and receiver circuit.

作者: BeiJu Huang *,XuZhang,ZanDong,WeiWang,HongDa Chen XuZhang ZanDong WeiWang HongDa Chen

作者单位: State Key Laboratory on Integrated Optoelectronics,Institute of Semiconductors,Chinese Academy of Sciences,Beijing 100083,China

会议类型: 国际会议

会议名称: 9th International Conference on Solid-State and Integrated-Circuit Technology(第9届固态和集成电路国际会议)

会议地点: 北京

会议语种:英文

页码: 985-987

在线出版日期: 2008-10-20（万方平台首次上网日期，不代表论文的发表时间）