Broad 0ezcitation of Er luminescence in Er-doped HfO2 films
In this paper,we investigated the broad sensitized luminescence properties of the Er-doped HfO2 films synthesized by pulsed laser deposition and ion implantation techniques,focusing on the mechanism of energy transfer in host matrix. The characteristics of photohiminescence (PL) in the Er-doped and undoped HfO2 films were analyzed with varyed measuring temperatures. Based on the PL and PL excitation (PLE),we proposed that the O vacancy defects,ion implantation induced defects and Hf can act as sensitizers,which results in the broad band excitation of Er luminescence at 1540nm. Cathode-luminescence (CL) measurements with hot electrons excitation show more features of the samples,and provide detailed information for the energy transfer and relaxation process.
Junzhuan Wang Zhuoqiong Shi Yi Shi Zhensheng Tao Lin Pu Lijia Pan Rong Zhang Youdou Zheng Fang Lu
Department of Physics and Key Laboratory of Photonic and Electronic Materials,Nanjing University,Nan Department of Physics,Fudan University,Shanghai 200433,P.R.China
国际会议
9th International Conference on Solid-State and Integrated-Circuit Technology(第9届固态和集成电路国际会议)
北京
英文
1021-1024
2008-10-20（万方平台首次上网日期，不代表论文的发表时间）