Effective N-type Doping in Flezible Single-Crystal Silicon Nanomembranes

摘要：

In this paper,effective doping control was studied in n-type doped flexible and transferable single-crystal Si nanomembranes (SiNMs). It is found that low-energy ion implantation is more favored in flip-transfer technique to obtain a high doping concentration at Si/SiO2 interface,as well as good crystal characteristic of the thin-film material. Low metal contact resistance and source/drain sheet resistance were achieved with 5.93×10(-5)Ω-cm2 and 18.96 Ω/□,respectively. By employing the optimized doping conditions,we fabricated flexible n-TFT on plastic substrate and reported the record-high electron field-effect mobility up to 775 cm2/V(-s).

作者: Huiqing Pang George K.Celler Zhenqiang Ma

作者单位: Department of Electrical and Computer Engineering,University of Wisconsin-Madison,1415 Engineering D Soitec USA,2 Centennial Dr.,Peabody,MA 01960,USA

会议类型: 国际会议

会议名称: 9th International Conference on Solid-State and Integrated-Circuit Technology(第9届固态和集成电路国际会议)

会议地点: 北京

会议语种:英文

页码: 1033-1036

在线出版日期: 2008-10-20（万方平台首次上网日期，不代表论文的发表时间）