Reducing Threshold Voltage of Organic Field-Effect Transistor by using ZrO2/PMMA as Gate Dielectric

摘要：

By depositing a PMMA (poh/(methyl methacrylate)) layer on top of an evaporated layer of ZrO2,the leakage has 4 orders of magnitude reducing compared with bare ZrO2 layer. Low roughness of PMMA/ZrO2 surface produces a high quality interface between the organic semiconductor and the combined insulator,thus the device has a significant improvement in performance. The typical field effect mobility,on/off current ratio,and sub-threshold slope of OFETs with bilayer dielectric are 5.6×10(-2) cm2/Vs,1.2×103,and 0.3 V/decaderespectively. It is noticeable that the threshold voltage is only 0. 1V.

关键词： Thin film OFET ZrO2 PMMA

作者: Liwei Shang Ming Liu Deyu Tu Lijuan Zhen Xinghua Liu Ge Liu

作者单位: Institute of Microelectronics,Chinese Academy of Sciences,Beijing 100029,P.R.China

会议类型: 国际会议

会议名称: 9th International Conference on Solid-State and Integrated-Circuit Technology(第9届固态和集成电路国际会议)

会议地点: 北京

会议语种:英文

页码: 1037-1040

在线出版日期: 2008-10-20（万方平台首次上网日期，不代表论文的发表时间）