Formation of SnOz Nanoparticles at the AIDCN/ITO Interface in Organic Cross-Point Memory Devices

摘要：

The formation characteristics and the effect on electrical behavior of the nanoparticles caused by the interfacial redox reaction are investigated in single-layer organic memory devices with a structure of Al(aluminium)/2-arnino-4,5-dicyanoimidazole(AIDCNyindium tin oxide (ITO). It is demonstrated that the AIDCN/ITO interface is crucial for the electrically switching behavior,where SnOx nanoparticles are spontaneously formed by the chemical reaction between the tin oxide in ITO and the imine in AIDCN molecule. Moreover,an organic cross-point memory device with a metallic mid-layer was fabricated. I-V measurement presented an on-off ratio as high as 108-1011.

作者: Yun Li Yedan Sun Danfeng Qiu Jianmin Zhu Lijia Pan Lin Pu Yi Shi

作者单位: National Laboratory of Solid State Microstructure and Department of Physics,Nanjing University,Nanjing 210093,P.R.China

会议类型: 国际会议

会议名称: 9th International Conference on Solid-State and Integrated-Circuit Technology(第9届固态和集成电路国际会议)

会议地点: 北京

会议语种:英文

页码: 1041-1044

在线出版日期: 2008-10-20（万方平台首次上网日期，不代表论文的发表时间）