Temperature dependence of photoluminescence properties of CdSzSe(1-z) quantum dots prepared on silicon substrate

摘要：

CdSxSe(1-x) quantum dots (QDs) were prepared on silicon substrate by a simple physical method. The temperature dependent photoluminescence (PL) properties of the CdSxSe(1-x) QDs have been investigated in a temperature range of 10-300 K. The PL intensity reveals an unusual increasing behaviour with increasing temperature in the range of 180 -260 K. And the energy gap shows a redshift of 62.23 meV when the temperature increases from 10 K to 300 K. The sulfur component (x) of CdSxSe(1-x) QDs is about 86.45% by calculation approximatively from PL peak energy at room temperature following Vigos Law. We also obtain the parameters of the varshni relation for CdSxSe(1-x) QDs from PL peak energy as a function of temperature and the best-fit curve.

作者: X.Chen H.Q.Zhang L.Z.Hu D.Q.Yu Z.W.Zhao S.S.Qiao J.Li J.X.Zhu

作者单位: School of Physics and Optoelectronic Technology,Dalian University of Technology,Dalian 116024,P.R.China

会议类型: 国际会议

会议名称: 9th International Conference on Solid-State and Integrated-Circuit Technology(第9届固态和集成电路国际会议)

会议地点: 北京

会议语种:英文

页码: 1045-1047

在线出版日期: 2008-10-20（万方平台首次上网日期，不代表论文的发表时间）