Eztremely broadband InGaAsP/InP super luminescent diodes

摘要：

For superluminescent diodes fabricated on the substrate with five 6 nm InGaAsP quantum wells and two 15 nm InGaAsP quantum wells,a very broad emission spectrum is obtained. The spectral width is nearly 400 nm,covering the range from 1250 nm to 1650 nm.

作者: G.Sh.Shmavonyan S.M.Zendehbad

作者单位: State Engineering University of Armenia,105 Teryan street,Yerevan,0002,Armenia

会议类型: 国际会议

会议名称: 9th International Conference on Solid-State and Integrated-Circuit Technology(第9届固态和集成电路国际会议)

会议地点: 北京

会议语种:英文

页码: 1052-1054

在线出版日期: 2008-10-20（万方平台首次上网日期，不代表论文的发表时间）