Combined transparent electrodes for high power GaN-based LEDs with long life time

摘要：

In this paper fabrication of high power light emitting diodes (LEDs) with combined transparent electrodes on both P-GaN and N-GaN have been demonstrated. Simulation and experimental results show mat comparing with traditional metal N electrodes the efficacy of LEDs with transparent N electrode is increased by more than 10% and it is easier in process than the other techniques. Further more,combining the transparent electrodes with dielectric anti-reflection film,the extraction efficiency can be improved by 5%. At the same time,the transparent electrodes were protected by the dielectric film and the reliability of LEDs can be improved.

作者: Liangchen Wang Xiaoyan Yi Xiaodong Wang Guohong Wang Jinmin Li

作者单位: Institute of Semiconductors,Chinese Academy Sciences,Beijing 100083,P.R.China

会议类型: 国际会议

会议名称: 9th International Conference on Solid-State and Integrated-Circuit Technology(第9届固态和集成电路国际会议)

会议地点: 北京

会议语种:英文

页码: 1055-1057

在线出版日期: 2008-10-20（万方平台首次上网日期，不代表论文的发表时间）