Ⅲ-N Based Electronics

摘要：

Large current carrying capabilities of AlN/GaN/InN based heterostructures and high breakdown voltages make this materials system uniquely suited for applications in high power and/or high frequency electronic devices,including power amplifiers,broadband amplifiers,power switches,and radio frequency switches. AlGaN/GaN insulated gate transistors have additional advantages of extremely low leakage current,higher current swing,improved linearity,better reliability,and higher power. The use of high-K dielectrics in such structures is expected to further improve performance. Reliability issues that have slowed down commercialization of Ⅲ-N electronics are now being resolved based on better understanding of device physics and device failure mechanisms.

作者: Michael S.Shur Grigory Simin Remis Gaska

作者单位: Center for Integrated Electronics,Rensselaer Polytechnic Institute,Troy,New York,12180 USA Department of Electrical Engineering,University of South Carolina,Columbia,SC 29208 USA Seasor Electronic Technology Inc.,Columbia,South Carolina,29209 USA

会议类型: 国际会议

会议名称: 9th International Conference on Solid-State and Integrated-Circuit Technology(第9届固态和集成电路国际会议)

会议地点: 北京

会议语种:英文

页码: 1066-1069

在线出版日期: 2008-10-20（万方平台首次上网日期，不代表论文的发表时间）