Recent Progress and Material Issues of High Power and High Frequency AlGaN/GaN HFETs

摘要：

Performances of AlGaN/GaN HFETs have much improved recently and very high potential of this heterostructure for high power and high frequency electronic devices has been verified. Application of new device technologies such as field plate,recessed gate,digital pre-distortion circuit and dual field plate was essential to realize such high device performances bath at 2 GHz,5GHz and 26 GHz. However,practical requirements on the quality and structure of these material systems for production of these devices are still not clear. Extensive studies on correlation between material quality and device performances were carried out under Japanese NEDO project. This paper reviews recent progress of the performances of high power and high frequency AlGaN/GaN HFETs. Then,several interesting results which suggest practical requirements on material quality and structure will be discussed based on our extensive characterization studies in terms of device performances and reliabilities.

作者: Yasushi Nanishi

作者单位: Department of Photonics,Ritsumeikan University,1-1-1 Noji-Higashi,Kusatsu,Shiga 525-8577,JAPAN

会议类型: 国际会议

会议名称: 9th International Conference on Solid-State and Integrated-Circuit Technology(第9届固态和集成电路国际会议)

会议地点: 北京

会议语种:英文

页码: 1070-1073

在线出版日期: 2008-10-20（万方平台首次上网日期，不代表论文的发表时间）