Fluorine Plasma Ion Implantation Technology: a New Dimension in GaN Device Processing
The recent discovery of the potential and charge modulation by fluorine ions incorporated in Ill-nitride heterojunction FETs has opened up numerous new opportunities of realizing desired device performance and fabricating integrated circuits with desirable circuit configurations. The most significant development based on the fluorine plasma ion implantation technology is the demonstration of self-aligned enhancement-mode (E-mode) AlGaN/GaN HEMT (high electron mobility transistors) that exhibits low on-resistance and low knee-voltage. In this paper,a comprehensive overview of the fluorine plasma ion implantation technology is presented. The discussions will focus on: 1) underlying physical mechanisms; 2) detailed dc and RF device characteristics; 3) circuit applications in wireless communication,high temperature electronics and power electronics and; and 4) reliability of fluorine ions in Ill-nitride semiconductors.
Kevin Jing Chen
Department of Electronic and Computer Engineering,Hong Kong University of Science and Technology Clear Water Bay,Kowloon,Hong Kong,China
国际会议
9th International Conference on Solid-State and Integrated-Circuit Technology(第9届固态和集成电路国际会议)
北京
英文
1074-1077
2008-10-20（万方平台首次上网日期，不代表论文的发表时间）