The Comprehensive Study of Liquid Phase Ozidation on GaAs-based Transistor Applications

摘要：

The GaAs-based HEMTs with gate oxide and HBTs with surface passivation prepared by liquid phase oxidation (LPO) will be demonstrated. As compared to the Schottky-gate HEMTs,the lower gate leakage currents,higher breakdown voltages,and improved RF performances make the proposed technique suitable for high-power and high-speed applications. Moreover,the HBTs with oxide passivation possess the characteristics of lower surface recombination currents,higher breakdown voltage,and improved higher dc current gain.

作者: Yeong-Her Wang

作者单位: Institute of Microelectronics,Department of Electrical Engineering National Cheng-Kung University,Tainan 701,Taiwan

会议类型: 国际会议

会议名称: 9th International Conference on Solid-State and Integrated-Circuit Technology(第9届固态和集成电路国际会议)

会议地点: 北京

会议语种:英文

页码: 1082-1085

在线出版日期: 2008-10-20（万方平台首次上网日期，不代表论文的发表时间）