Evidence of Mobile Holes on GaN HFET Barrier Layer Surface Root Cause of High Power TransistorAmplificr Current Collapse

摘要：

Evidence of mobile,positive charges (holes) on the top surface of GaN HFET is found by conducting C-V measurement of a MIS HEMT diode. Significantly improved understanding of the effects of built-in electric polarization and doping on III-nitride heterojuction device structure electrical properties has been made. The result also confirms that removal of surface mobile holes is the root cause for high power GaN HEFT current collapse.

作者: Cheng P.Wen Jinyan Wang Yilong Hao Yaohui Zhang Keimay Lau Tang

作者单位: Institute of Microelectronics,Peking University,Beijing 100871,PR China Suzhou Institute of Nano Technology,Chinese Academy of Science,Suzhou,PR China Hong Kong University of Science and Technology,Hong Kong (SAR),PR China

会议类型: 国际会议

会议名称: 9th International Conference on Solid-State and Integrated-Circuit Technology(第9届固态和集成电路国际会议)

会议地点: 北京

会议语种:英文

页码: 1090-1093

在线出版日期: 2008-10-20（万方平台首次上网日期，不代表论文的发表时间）