Improved Performance of 3D tri-gate 4H-SiC MESFETs with Recessed Drift Region
An improved 3D tri-gate 4H-SiC MESFETs structure with recessed drift region was proposed. The recessed drift region of the proposed structure is to reduce the channel thickness between gate and drain to increase breakdown voltage as well as to eliminate gate depletion layer extension to source/drain to decrease gate-source capacitance. The DC and RF electrical characteristics of the proposed structure were studied in detail by numerical simulation. The simulated results showed that the maximum theoretical output power density of the proposed structure is about 19% larger than that of the published 3D tri-gate structure. The cut-off frequency (fT) and the maximum oscillation frequency (fmax) of the proposed structure are 19.3GHz and 74.1GHz compared to 16.1GHz and 55.9GHz of those of the published 3D tri-gate structure,respectively.
Jinping Zhang Bo Zhang Zhaoji Li
State key Laboratory of Electronic Thin Films and Integrated Devices,University of Electronic Science and Technology of China,Chengdu 610054,P.R.China
国际会议
9th International Conference on Solid-State and Integrated-Circuit Technology(第9届固态和集成电路国际会议)
北京
英文
1098-1101
2008-10-20（万方平台首次上网日期，不代表论文的发表时间）