High Temperature Operation of Normally-off AlGaN/GaN Power HEMTs Using CF4 Plasma Treatment
A normally-off AlGaN/GaN power HEMTs are reported and demonstrated by utilizing the CF4 plasma treatment technique. The key feature is the incorporation of fluorine ions under the Schottky gate by CF4 plasma treatment that effectively depletes the two-dimensional electron gas (2DEG) under the Schottky gate,and then pinches off the conduction path. As a result,a normally-off power HEMT is achieved and its high temperature characteristics are investigated. The high temperature measurement results show that the threshold voltage (Vth) shows little temperature dependence as the temperature rises to 250℃. This device also exhibits a maximum drain current (Imax) of 129 mA/mm at VGS=3 V and VDs=10V,and a peak transconductance (Gm) of 60 mS/mm at 250℃,which make the proposed normally-off AlGaN/GaN power HEMT a promising candidate for high temperature applications.
Wanjun Chen King Yuen Wong Wei Huang Kevin J.Chen
Department of Electronic and Computer Engineering,Hong Kong University of Science and Technology Clear Water Bay,Kowloon,Hong Kong
国际会议
9th International Conference on Solid-State and Integrated-Circuit Technology(第9届固态和集成电路国际会议)
北京
英文
1102-1105
2008-10-20（万方平台首次上网日期，不代表论文的发表时间）