Novel structural Ti/Al-based ohmic contacts on AlGaN/GaN heterostructures

摘要：

To improve the performances of ohmic contacts for GaN devices,a novel multilayer Ti/Al-based metal scheme (Ti/Al/Ti/Al/Ti/Al/Ti/Al/Ni/Au0) on undoped AlGaN/GaN heterostructures was employed. A contact with pc (specific contact resistance) of 8.74E-07 Ω-cm2,Rc of 0.22 Ω-mm was demonstrated. Ohmic contacts with the novel metal structure were measured with I-V,SEM,HRTEM to show their properties. The results showed that ohmic contacts with novel structures have better surface morphology and proposed thermal stability than those using conventional Ti/Al/Ni/Au metal scheme,therefore ohmic contacts with novel structures should be better candidates for high power and high frequency GaN devices.

关键词： AlGaN/GaN ohmic contacts surface morphology

作者: Zhihua Dong Jinyan Wang Min Yu Yilong Hao C.P.Wen Yangyuan Wang

作者单位: Key Laboratory of Microelectronic Devices and Circuits,Institute of Microelectronics,Peking University,100871

会议类型: 国际会议

会议名称: 9th International Conference on Solid-State and Integrated-Circuit Technology(第9届固态和集成电路国际会议)

会议地点: 北京

会议语种:英文

页码: 1110-1113

在线出版日期: 2008-10-20（万方平台首次上网日期，不代表论文的发表时间）