AlGaN/AlN/GaN/InGaN/GaN DH-HEMTs with improved mobility grown by MOCVD
AlGaN/AlN/GaN/InGaN/GaN double heterojunction high electron mobility transistors (DH-HEMTs) structures with improved buffer isolation have been investigated. The structures were grown by MOCVD on sapphire substrate. AFM result of this structure shows a good surface morphology with the root-mean-square roughness (RMS) of 0.196 nm for a scan area of 5μm×5μm. A mobility as high as 1950 cm2/Vs with the sheet carrier density of 9.89×1012 cm(-2) was obtained,which was about 50% higher than other results of similar structures which have been reported. Average sheet resistance of 327 Q/sq was achieved. The HEMTs device using the materials was fabricated,and a maximum drain current density of 718.5 mA/mm,an extrinsic transconductance of 248 mS/mm,a current gain cutoff frequency of 16 GHz and a maximum frequency of oscillation 35 GHz were achieved.
Jian Tang Meng Wei Jinmin Li Zhanguo Wang Xiaoliang Wang Tangsheng Chen Hongling Xiao Junxue Ran Minglan Zhang Guoxin Hu Chun Feng Qifeng Hou
Materials Science Center,Institute of Semiconductors,Chinese Academy of Sciences,Beijing 100083,P.O. Nanjing Electron Devices Institute,Nanjing 210016,PR China
国际会议
9th International Conference on Solid-State and Integrated-Circuit Technology(第9届固态和集成电路国际会议)
北京
英文
1114-1117
2008-10-20（万方平台首次上网日期，不代表论文的发表时间）