Temperature Dependence of Breakdown in Anisotropic 6H-SiC MOSFET

摘要：

The influence of temperature on the breakdown in anisotropic 6H-SiC MOSFET is studied. Taken Si face as an example,the influence of temperature on the breakdown voltage,critical electrical field and specific on-state resistance is thoroughly analyzed. Considering the anisotropy of material,anisotropy of the breakdown is obtained in different face but the tendency of breakdown voltage vs. temperature is same,both has positive temperature coefficient.

作者: Liu Li Yang Yin-tang Chai Chang-chun

作者单位: Ministry of Edu.Key Lab.Of Wide Band-Gap Semiconductor Material and Devices,Xidian Univ.,Xian 710071,China

会议类型: 国际会议

会议名称: 9th International Conference on Solid-State and Integrated-Circuit Technology(第9届固态和集成电路国际会议)

会议地点: 北京

会议语种:英文

页码: 1126-1129

在线出版日期: 2008-10-20（万方平台首次上网日期，不代表论文的发表时间）