A 45nm Low Power Bulk Technology Featuring Carbon Co-implantation and Laser Anneal on 45°-rotated Substrate

摘要：

This paper presents a cost-effective low power 45nm bulk technology platform,primarily designed to serve the wireless multimedia and consumer electronics need. This technology platform features carbon co-IIP in the nMOS halo,laser annealing scheme,stress liner on the 45°-rotated wafer (<100>) for process simplicity to achieve high device performance and low leakage together. Drive current as high as 650/320 uA/um at Ioff of 0.5 nA/um with Vdd=1.1V has been achieved for both NMOS and PMOS respectively. Ring oscillator speed (FO=1) has been boosted up by 30% with the device optimization. SRAM Vt mismatch is also improved by 10% with carbon co-IIP with good SRAM characteristics and low leakage current in 0.299 um2 cell.

作者: J.Yuan O.Kwon O.S.Kwon J.Yan S.Fang W.Wille H.Wang Y.T.Chow R.Booth T.Kebede W.Clark V.Chan H.Mo C.Ryou J.Liang J.H.Yang C.W.Lai S.S.Naragad O.Gluschenkov M.R.Visokay C.Radens S.Deshpande M.Eller H.Shang Y.Li N.Cave J.Sudijono J.Ku R.Divakaruni N.Rovedo H.K.Lee Y.Gao V.Sardesai N.Kanike V.Vidya

作者单位: IBM Semiconductor Research and Development Center (SRDC),Hopewell junction,NY,12533 Infineon Technologies AG Chartered Semiconductor Manufacturing Limited Samsung Elec.Co.Ltd Chartered Semiconductor anufacturing Limited IBM Semiconductor Research and Development Center (SRDC),Hopewell unction,NY,12533 Freescale Co.Ltd

会议类型: 国际会议

会议名称: 9th International Conference on Solid-State and Integrated-Circuit Technology(第9届固态和集成电路国际会议)

会议地点: 北京

会议语种:英文

页码: 1130-1133

在线出版日期: 2008-10-20（万方平台首次上网日期，不代表论文的发表时间）