A Study of Inverse Narrow Width Effect of 65nm Low Power CMOS Technology

摘要：

In this paper,we present the investigation of inverse narrow width effect (TNWE) of 65nm low-power process with dual gate oxide shapes. To evaluate the impact of STI process on narrow devices,we conducted different experiments in STI process steps,including STI liner,STI elevation,STI liner annealing and STI nitride pullback. The result shows only STI liner annealing and STI nitride pullback have impact on the INWE of MOSFETs. Different gate oxidation methods are also experimented. It is found that gate oxidation process gives a strong impact on the mobility of narrow width devices and makes narrow width transistors behavior significantly different.

作者: Liu Xinfu Lim Louis Chwa Sally Yu Xing Hong Feng Simon Yang Lim Kheeyong Wu Zhihua Xiong Zhibin Ding Yongping Nong Hao Wu Yanping Shen Yanping Tang Bin

作者单位: Chartered Semiconductor Manufacturing LTD,738406,Singapore Chartered Semiconductor Manufacturing TD,738406,Singapore

会议类型: 国际会议

会议名称: 9th International Conference on Solid-State and Integrated-Circuit Technology(第9届固态和集成电路国际会议)

会议地点: 北京

会议语种:英文

页码: 1138-1141

在线出版日期: 2008-10-20（万方平台首次上网日期，不代表论文的发表时间）