A Simple Solution of the WSiz Peeling Issue at MDDR Technology

摘要：

In this paper,the advanced process has been presented to remove the Wsix peeling which was brought in sub-100nm DRAM SRCAT (Sphere-shaped-Recess-Channel-Array Transistor). The source of WSix peeling was proved to be the groove of gate poly film. We have completely solved the problems to adopt the gate-poly CMP (Chemical Mechanical Polishing)process.

关键词： SRCAT(Sphere-shaped-Recess-Channel-Array Transistor) WSizPeeling Groove Gate Poly CMP(Chemical Mechanical Polishing)

作者: HanYong Chae Sung Young Lee TaeHoon Park HyunSung Lee KwangHce Lee JuWon Sco Kyuc Sang Choi

作者单位: School of Semiconductor Engineering.SamSung Institute of Technology (SSIT).Gyeonggi-Do,KOREA FAB3 Te School of Semiconductor Engineering.SamSung Institute of Technology (SSIT).Gyeonggi-Do,KOREA Product FAB3 Team,Memory Division Semiconductor Business Samsung Electronics Co.Samsung Electronics Co.,San

会议类型: 国际会议

会议名称: 9th International Conference on Solid-State and Integrated-Circuit Technology(第9届固态和集成电路国际会议)

会议地点: 北京

会议语种:英文

页码: 1150-1153

在线出版日期: 2008-10-20（万方平台首次上网日期，不代表论文的发表时间）