Investigation on Thin Gate Ozide Behavior for CMOS Devices

摘要：

The thin gate dielectric behavior for CMOS devices was investigated. The linear correlation of thickness measured by optical and XPS can still work for ultrathin gate oxide with thickness less than 10 angstrom. Electrical properties,including EOT,NBTI,mobility and Ion-Ioff,were strongly correlated with nitrogen concentration within oxide and the oxide thickness measured by XPS. It is the purpose of this work to develop methods for improving the device performance through -optimization of the thickness and nitrogen dose of the thin gate dielectric layer.

作者: Mingyuan Liu Yonggen He Albert Hung Yunzhen Liu Bingwu Liu Dibao Zhou Kai Zheng Jinghua Liu Jianhua Ju

作者单位: Logic Development Center of Semiconductor Manufacturing International Co.Ltd,Beijing China

会议类型: 国际会议

会议名称: 9th International Conference on Solid-State and Integrated-Circuit Technology(第9届固态和集成电路国际会议)

会议地点: 北京

会议语种:英文

页码: 1162-1165

在线出版日期: 2008-10-20（万方平台首次上网日期，不代表论文的发表时间）