Polyozide Grown on Metal Induced Re-crystallized Polysilicon Combined with CF4 Plasma

摘要：

In the paper,the characteristics of thermal polyoxide grown on re-crystallized polysilicon by Metal-Induced -Crystallization (MIC) have been studied. The oxide quality can be improved due to smoother polysilicon/polyoxide interface and lower charge trapping by MIC re-crystallization. Furthermore,the polyoxide combined with CF4 plasma treatment,which exhibited better electrical characteristics such as larger breakdown electric field,and larger charge-to-breakdown. This is believed to be due to that the incorporated fluorine is existed within the oxide and polysilicon interface to form strong Si-F bond for oxide quality integrity.

作者: Chyuan-Haur Kao C.H.Lee T.C.Chan J.S.Chiu C.S.Chen K.S.Chen C.S.Chuang S.K.Chen

作者单位: Department of Electronic Engineering,Chang Gung University,259 Wen-Hwa 1st Road,Kwei-Shan Tao-Yuan 333,Taiwan,China

会议类型: 国际会议

会议名称: 9th International Conference on Solid-State and Integrated-Circuit Technology(第9届固态和集成电路国际会议)

会议地点: 北京

会议语种:英文

页码: 1170-1172

在线出版日期: 2008-10-20（万方平台首次上网日期，不代表论文的发表时间）