A Study of 65nm BEOL Trench Etch Issues

摘要：

65nm BEOL trench etch is apt to suffer the marginal PR issue. It is a big challenge for trench etch process to simultaneously satisfy the requirements for both metal resistance (Rs) and breakdown Voltage (VBD). The copper surface condition of via bottom is a big concern of trench etch process as well. In this paper,we present several electrical parameter issues that occurred at 65nm trench etch process such as Rs,via resistance (Rc) and VBD. The feasible solutions and related etching mechanisms are also addressed for the above issues from the point view of the improvement of line-edge roughness (LER),within wafer AEI CDU (critical dimension uniformity) and interface conditions of via-bottom.

作者: Lin-Lin Zhao Man-Hua Shen Qiu-Hua Han Hai-Yang Zhang Shih-Mou Chang

作者单位: Semiconductor Manufacturing International Corporation,18 Zhang Jiang Rd.,Pudong New Area,Shanghai 201203,China

会议类型: 国际会议

会议名称: 9th International Conference on Solid-State and Integrated-Circuit Technology(第9届固态和集成电路国际会议)

会议地点: 北京

会议语种:英文

页码: 1173-1176

在线出版日期: 2008-10-20（万方平台首次上网日期，不代表论文的发表时间）