Ultra-Low-Temperature Process Modules.for Back-Wafer-Contacted Silicon-on-Glass RF/Microwave Technology

摘要：

This paper reviews several novel process modules developed for the processing of the backside of the wafer of our substrate-transfer technology called back-wafer-contacted silicon-on-glass (SOG),which is in use for fabricating RF/microwave devices such as high-quality varactors and bipolar transistors. In this technology the silicon wafer is transferred to glass by gluing. The integrity of the acrylic adhesive limits the subsequent processing temperatures to less than 300 ℃. Ultra-low-temperature process modules have therefore been developed to nevertheless allow the creation of low-ohmic contacts and high-quality ultrashallow junctions. Moreover,a physical-vapor deposition of AlN provides an effective means of integrating a thin-film dielectric heatspreader.

作者: Lis K.Nanver Koen Buisman Silvana Milosavljevic Egbert J.G Goudena Viktor Gonda Yann Civale Tom L.M.Scholtes Luigi La Spina Hugo Schellevis Gianpaolo Lorito Francesco Sarubbi Milos Popadic

作者单位: Delft Institute of Microsystems and Nanoelectronics (DIMES),Delft University of Technology,Delft,The Delft Institute of Microsystems and Nanoelectronics(DIMES),Delft University of Technology,Delft,The

会议类型: 国际会议

会议名称: 9th International Conference on Solid-State and Integrated-Circuit Technology(第9届固态和集成电路国际会议)

会议地点: 北京

会议语种:英文

页码: 1184-1187

在线出版日期: 2008-10-20（万方平台首次上网日期，不代表论文的发表时间）