Thermal Accumulation Improvement for Fabrication Manufacturing of Monolithic 3D Integrated Circuits

摘要：

The thermal accumulation improvement is based on laser epitaxial growth for monolithic 3D-ICs manufacturing. We propose one structure which has a thermal conduction layer such as Cu in ILD oxide layer. To reduce the Via depth and ILD oxide thickness can improve the re-crystallization quality for upper Si layer. With the conduction Cu layer,the Via depth can reduce to 200 nm,and the maximum temperature of the 1st layer poly gate and source/drain maintains as low as ～320K and ～350K,respectively,for laser re-crystallization annealing.

作者: Y.-T.Liu M.H.Lee H.T.Chen C.-F.Huang C.-Y.Peng L.-S.Lee M.-J.Kao

作者单位: Institute of Electro-Optical Science and Technology,National Taiwan Normal University,Taipei,Taiwan Display Technology Center (DTC),Industrial Technology Research Institute (ITRI),Hsinchu,Taiwan Department of Electrical Engineering and Graduate Institute of Electronics Engineering,National Taiw Electronics and Optoelectronics Research Laboratories (EOL),Industrial Technology Research Institute

会议类型: 国际会议

会议名称: 9th International Conference on Solid-State and Integrated-Circuit Technology(第9届固态和集成电路国际会议)

会议地点: 北京

会议语种:英文

页码: 1207-1210

在线出版日期: 2008-10-20（万方平台首次上网日期，不代表论文的发表时间）