Comparison of the Ru thin films grown on Si,TiN/Si and TaN/Si substrates by plasma enhanced atomic layer deposition

摘要：

High quality Ru thin film with low electrical resistivity (10～14μΩcm) was successfully deposited on the Si,atomic layer deposition (ALD) grown TiN(2nm)/Si and ALD TaN(5nm)/Si substrates by using plasma enhanced atomic layer deposition (PEALD). Different growth mode and crystallization behavior were observed for the Ru films grown on these different substrates. Results show that the lowest surface roughness,lowest electrical resistivity and best crystallinity of the Ru films can be achieved on all three substrates with a growth temperature of 270℃. Ex and in-situ X-ray diffraction were employed to verify the good diffusion barrier properties of Ru/TiN and Ru/TaN bi-layer structure.

作者: Qi Xie Jan Musschoot Christophe Detavemier Davy Deduytsche Roland L Van Meirhaeghe Yu-Long Jiang Guo-Ping Ru Bing-Zong Li Xin-Ping Qu

作者单位: State Key lab of ASIC and System,Department of Microelectronics,Fudan University,Shanghai 200433,Chi Department of Solid State Science,Ghent University,Krijgslaan 281/S1,B-9000 Ghent,Belgium

会议类型: 国际会议

会议名称: 9th International Conference on Solid-State and Integrated-Circuit Technology(第9届固态和集成电路国际会议)

会议地点: 北京

会议语种:英文

页码: 1231-1234

在线出版日期: 2008-10-20（万方平台首次上网日期，不代表论文的发表时间）