Mechanism of Via Etch Striation and Its Impact on Contact Resistance & Breakdown Voltage in 65nm Cu low-k interconnects

摘要：

The mechanism of two kinds of via etch striation (type Ⅰ and type Ⅱ) has been investigated to improve contact resistance (Re) uniformity and solve breakdown voltage (VBD) issue in 65nm Cu low-k interconnects. Heavy etching polymer deposition on the sidewall of capping layer and rapid photo-resist (PR) consumption on PR shoulder are two main resources to result in via etch striation. The effects of both via etch striations on Re and VBD can be decoupled. Type Ⅰ striation related to bare open (BO) step leads to worse Re uniformity while type II striation formed in main etch (ME) and over-etch (OE) step degrades VBD performance.

作者: Wu Sun Man-Hua Shen Xin-Peng Wang Hai-Yang Zhang Xiao-Ming Yin Shih-Mou Chang

作者单位: Semiconductor Manufacturing International Corporation,18 Wen Chang Rd,BDA,Beijing 100176,China

会议类型: 国际会议

会议名称: 9th International Conference on Solid-State and Integrated-Circuit Technology(第9届固态和集成电路国际会议)

会议地点: 北京

会议语种:英文

页码: 1235-1237

在线出版日期: 2008-10-20（万方平台首次上网日期，不代表论文的发表时间）