Gate-first high-k/metal gate stack for advanced CMOS technology

摘要：

Practical and manufacturable solutions for metal gate/dual high-k CMOS integration are presented. In order to overcome the difficulties of threshold voltage control of metal gate/high-k gate stack especially for gate-first integration,several material designs have been proposed so far. These include different metal gate materials and different high-k materials which are separately used in nMOS and pMOS transistors. These approaches sometimes bring about complicated CMOS integration scheme. In this paper,therefore,we will give simple metal gate/dual high-k CMOS fabrication processes with low threshold voltages which are suitable for scaled CMOS device manufacturing.

作者: Y.Nara T.Eimori Y.Ohji N.Mise M.Kadoshima T.Morooka S.Kamiyania T.Matsuki M.Sato T.Ono T.Aoyama

作者单位: Semiconductor Leading Edge Technologies (Selete)16-1 Onogawa,Tsukuba,Ibaraki,305-8569 Japan

会议类型: 国际会议

会议名称: 9th International Conference on Solid-State and Integrated-Circuit Technology(第9届固态和集成电路国际会议)

会议地点: 北京

会议语种:英文

页码: 1249-1251

在线出版日期: 2008-10-20（万方平台首次上网日期，不代表论文的发表时间）