Theoretical investigations on metal/high-k interfaces

摘要：

We have found that effective work functions of high-work function gate metals (p-metals) become small and Fermi level pinning of gate metals occurs after high temperature treatment as the same in the case in p+poly-Si gates. On the contrary,intrinsic hybridization between metal and high-k wave function at the interface is crucial factor to determine effective work function of gate metals after low temperature treatment As discussed above,metal/high-k interface properties are much different each other after high-and lowtemperature treatment.

作者: K.Shiraishi T.Nakayama S.Miyazaki A.Ohta Y.Akasaka H.Watanabe Y.Nara K.Yamada

作者单位: University of Tsukuba,Japan Chiba University,Japan Hiroshima University,Japan Selete,Japan Present address,Tokyo Electron Ltd.,Japan Osaka University,Japan Selete,Japan Waseda University,Japan

会议类型: 国际会议

会议名称: 9th International Conference on Solid-State and Integrated-Circuit Technology(第9届固态和集成电路国际会议)

会议地点: 北京

会议语种:英文

页码: 1256-1259

在线出版日期: 2008-10-20（万方平台首次上网日期，不代表论文的发表时间）