Alloying Effects in Ni Silicide for CMOS Applications

摘要：

The solid-state reaction of Ni/Si in the presence of other elements is investigated. The alloying effects on both NiSi/Si Schottky contacts and Ni fully silicided (FUSI) gates on SiO2 dielectric are studied by phase,composition,and electrical characterization tools. The results show that after silicidation Er,Y,and Al all segregated at the Ni-silicide surface rather than piled up at the Ni-silicide/Si interface due to their high affinity to oxygen,therefore little modulation of Schottky barrier height was observed. In contrast,Ho-and Er-alloyed Ni FUSI gates showed significant work function modulation,which could be related to the crystallinity change of the NiSi film in the presence of these elements.

作者: Guo-Ping Ru Yu-Long Jiang Bao-Min Wang Yi-Fei Huang Wei Huang

作者单位: State Key Laboratory of ASIC and System,Department of Microelectronics,Fudan University,Shanghai 200433,China

会议类型: 国际会议

会议名称: 9th International Conference on Solid-State and Integrated-Circuit Technology(第9届固态和集成电路国际会议)

会议地点: 北京

会议语种:英文

页码: 1264-1267

在线出版日期: 2008-10-20（万方平台首次上网日期，不代表论文的发表时间）