A Study of Hafnium Diozide (HfO2) Dielectric Charges

摘要：

In this paper,hafnium dioxide,HfO2,one of the promising high-k dielectric films is studied. Capacitance-Voltage measurements were carried out to investigate properties such as oxide charges and interface trap charges that exist in the dielectric. The investigation has been carried out by experiment and modeling. Annealing experiments in forming gas at 380℃ were conducted on the MOS capacitors. It can be concluded that the dielectric charges for hafniuin dioxide,HfO2 manage to be reduced significantly by annealing treatment. The reduction of oxide and interface charges by annealing is possible provided that the time taken for the annealing process is well controlled.

作者: Ahmad Sabirin Zoolfakar Hashimah Hashim Steve Tayior

作者单位: Faculty of Electrical Engineering,Universiti Teknologi MARA,Malaysia Faculty of Electrical Engineering,University of Liverpool,United Kingdom

会议类型: 国际会议

会议名称: 9th International Conference on Solid-State and Integrated-Circuit Technology(第9届固态和集成电路国际会议)

会议地点: 北京

会议语种:英文

页码: 1268-1271

在线出版日期: 2008-10-20（万方平台首次上网日期，不代表论文的发表时间）