Modulate Work Function of Ni-FUSI metal gate by implanting Yb

摘要：

This paper investigates the work function adjustment of Ni-FUSI metal gate by implanting Yb into poly-Si gate before silicidation. It is obvious that implanting Yb into poly-Si before silicidation can modulate the work function of Ni-FUSI metal gate efficiently and increasing dose can extend the range of work function modulation. The ability of work function modulation by Yb implanting is excellent. It can satisfy the work function requirement of high performance NMOS devices and highly compatible with CMOS processes.

作者: Huajie Zhou Qiuxia Xu

作者单位: Institute of Microelectronics,Chinese Academy of Science,Beijing 100029,P.R.China

会议类型: 国际会议

会议名称: 9th International Conference on Solid-State and Integrated-Circuit Technology(第9届固态和集成电路国际会议)

会议地点: 北京

会议语种:英文

页码: 1272-1275

在线出版日期: 2008-10-20（万方平台首次上网日期，不代表论文的发表时间）