Study on Electrical Properties of HfTiON and HiTiO Gate Dielectric Ge MOS Capacitors with Wet-NO Surface Pretreatment

摘要：

Reactive co-sputtering is employed to prepare HfTiO/GeOxNy and HfTiON/GeOxNy stack gate dielectrics by using wet NO or N2O surface pretreatment. The experimental results show that the wet NO pretreatment can lead to excellent interface properties,gate leakage properties and device reliability,especially for HfTiON/GeOxNy stack gate dielectrics. The involved mechanisms lie in N-barner role and suitable N incorporation in GeOxNy interlayer,effectively preventing further increase of GeOxNy interlayer and the growth of unstable GeOx during subsequent processing.

作者: Xiao Zou Jing-Ping Xu

作者单位: School of Electromachine & Architecture Engineering,Jianghan University,Wuhan,430056,Peoples Republ Department of Electronic Science & Technology,Huazhong University of Science and Technology,Wuhan,43

会议类型: 国际会议

会议名称: 9th International Conference on Solid-State and Integrated-Circuit Technology(第9届固态和集成电路国际会议)

会议地点: 北京

会议语种:英文

页码: 1280-1283

在线出版日期: 2008-10-20（万方平台首次上网日期，不代表论文的发表时间）