Thermal stability of HfON,HfSiON and HfTaON gate dielectrics

摘要：

The thermal stability of HfON,HfSiON and HfTaON films on Si substrate prepared by physical vapor deposition were investigated using high resolution transmission electronic microscope and x-ray photoelectron spectroscopy. HfO2 film has lower crystallization temperature. N,Si or Ta incorporation into HfO2 film can improve its crystallization temperature. But HfON films crystallization temperature is still low and crystallizes partially under 700℃. HfSiON and HfTaON have higher crystallization temperature. And HfSiON can sustain amorphous under 1000℃,while partial crystallization of HfTaON is observed at the same temperature. Si or Ta incorporation has different influence on the gate dielectrics thermal stability. HfSiON film has good thermal stability and dont react with Si substrate under higher temperature. While,HfTaON film easily reacts with Si substrate,forming the low k interfacial layer.

作者: Gaobo Xu Qiuxia Xu

作者单位: Institute of Microelectronics,Chinese Academy of Science,Beijing 100029,P.R.China

会议类型: 国际会议

会议名称: 9th International Conference on Solid-State and Integrated-Circuit Technology(第9届固态和集成电路国际会议)

会议地点: 北京

会议语种:英文

页码: 1284-1287

在线出版日期: 2008-10-20（万方平台首次上网日期，不代表论文的发表时间）