Atomic Ozygen Effects on NiSi and Ni(Pt)Si: Novel ozidation mechanism

摘要：

XPS data demonstrate that exposure of NiSi or Ni(Pt)Si to atomic oxygen at 300 K results in the kinetically controlled formation of transition metal silicate-containing overlayers>45 A thick regardless of the type of substrate doping. The results indicate that plasma exposure poses significant problems for NiSi/Ni(Pt)Si processing and oxide removal prior to subsequent metallization.

作者: Sudha Manandhar Brian Copp Jeffry Kelber

作者单位: Dept.of Chemistry,University of North Texas,Denton,TX,76203,USA Dept.of Materials Science and Engineering,University of North Texas,Denton,TX,76203,USA Dept.of Chemistry,University of North Texas,Denton,TX,76203,USA Dept.of Materials Science and Engine

会议类型: 国际会议

会议名称: 9th International Conference on Solid-State and Integrated-Circuit Technology(第9届固态和集成电路国际会议)

会议地点: 北京

会议语种:英文

页码: 1300-1303

在线出版日期: 2008-10-20（万方平台首次上网日期，不代表论文的发表时间）