Ni silicidation on Heavily Doped Si Substrates
Ni silicide films were formed on both heavily doped n+and p+Si substrates at various temperatures ranged from 200℃ to 950℃ and its electrical and structural properties were studied. It was found that the phase traasition temperature from NiSi phase to NiSi2 phase depend on substrate types; 900℃ for NiSi film on n+Si substrate and 750℃ for NiSi film on p+Si substrate,respectively. It was also found that agglomerations of Ni silicide films on n+Si substrates begin to occur at the annealing temperatures around 600℃ while there is no agglomeration observed in Ni silicide films on p+Si substrates up to 700℃. Obtained results show that the agglomeration is especially important factor in the process temperature dependency of the sheet resistance of Ni silicides formed on n+Si substrates. It was also demonstrated that the agglomeration can be suppressed by an inserted thin Boron layer at the interface of Ni/Si.
Parhat Ahmet Takashi Shiozawa Koji Nagahiro Takahiro Nagata Kuniyuki Kakushima Kazuo TsutsuiToyohiro Chikyow Hiroshi Iwai
Frontier Research Center and Tokyo Institute of Technology 4259 Nagatsuta, Midonku, Yokohama 226-850 Interdisciplinary Graduate School of Science and Engineering, Tokyo Institute of Technology 4259 Nag Advanced Electric Materials Center,National Institute for Materials Science 1-1 Namiki,Tsukuba,Ibara
国际会议
9th International Conference on Solid-State and Integrated-Circuit Technology(第9届固态和集成电路国际会议)
北京
英文
1304-1307
2008-10-20（万方平台首次上网日期，不代表论文的发表时间）